What is BFO?
Bismuth iron oxide (Bismuth ferrite, BiFeO3, BFO) – a material with variable properties for various electronic applications.
Microelectronics and related innovations and data processing have changed our lives like almost no other technology in the last 30 years. The main drivers ware advances in hardware basics. After the so-called Moore’s Law, the integration density on circuits doubles about every 18 months. After the structures on chips have become smaller for a long time, now physical limits are reached. The integration density is no longer the sole focus, but issues as energy supplies and More-Than-Moore functions of circuits take precedence, especially for mobile applications. For future circuits more and more new materials need to come into play, who are able to complement the CMOS technology. BFO is such a material, which can complement CMOS with its very attractive features.
BFO thin films with metal electrodes allow the non-volatile shifting of the resistance for example the capacitance. The BFO layer has a flexible barrier height, which can analogous, fast and energy-efficiently be long-term adjusted by applying a voltage pulse.
These novel properties unfold without an electroforming step, at temperatures of up to 80 °C – 120 °C. The technological feasibility of the few necessary procedural process steps for integration into existing CMOS technology has been demonstrated at a semi-industrial scale and has shown the scaling on 4″-6″ wafer with CMOS compatible, metallic conductive electrodes. The BFO platform as well as the proposed applications are patented.